Datasheet > 2N7002F215

2N7002F215

更新时间： 2022-05-20 01:45:03

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	100K
描述
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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2N7002F215 数据手册

2N7002F

Philips Semiconductors

N-channel TrenchMOS FET

5. Thermal characteristics

Table 4:

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

R_th(j-sp)thermal resistance from junction to solder point

see Figure 4

150

350

K/W

[1]

R_th(j-a)

thermal resistance from junction to ambient

[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air

003aab358

10³

Z_th(j-sp)

(K/W)

10²

δ =0.5

0.2

0.1

0.05

0.02

single pulse

10^-4

10^-5

10^-3

10^-2

10^-1

t_p(s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

2N7002F_3

Product data sheet

Rev. 03 — 28 April 2006

4 of 12

1 2 345 6 7...12

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