Datasheet > 2N7002F215

2N7002F215

更新时间： 2022-05-20 01:45:03

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	100K
描述
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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2N7002F215 数据手册

2N7002F

Philips Semiconductors

N-channel TrenchMOS FET

03ai13

4.5

03ai15

5000

R_DSon

(mΩ)

4000

I_D

(A)

0.8

V_GS(V) =

0.6

0.4

0.2

3000

2000

1000

4.5

V_GS(V) = 3.5

0.5

1.5

0.2

0.4

0.6

0.8

I_D(A)

V_DS(V)

T_j= 25 °C

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

03ai16

03aa28

2.4

I_D

(A)

0.8

0.6

0.4

1.8

1.2

0.6

25 °C

T_j= 150 °C

0.2

-60

120

180

T_j(°C)

V_GS(V)

T_j= 25 °C and 150 °C; V_DS> I_D× R_DSon

R_DSon

a =

------------------------------

R_DSon(25

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

2N7002F_3

Product data sheet

Rev. 03 — 28 April 2006

6 of 12

1...3 4 567 8 9...12

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