Datasheet > 2N7002F215

2N7002F215

更新时间： 2022-05-20 01:45:03

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管场效应晶体管
页数	文件大小	规格书
12页	100K
描述
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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2N7002F215 数据手册

2N7002F

Philips Semiconductors

N-channel TrenchMOS FET

03ai17

03ai18

10²

I_S

(A)

0.8

0.6

0.4

(pF)

C_iss

C_oss

C_rss

0.2

T_j= 25 °C

150 °C

0.2

10^-1

0.4

0.6

0.8

10²

V_SD(V)

V_DS(V)

T_j= 25 °C and 150 °C; V_GS= 0 V

V_GS= 0 V; f = 1 MHz

Fig 13. Source current as a function of source-drain

voltage; typical values

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

2N7002F_3

Product data sheet

Rev. 03 — 28 April 2006

8 of 12

1...5 6 789 10 11 12

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