2N7002EPT

更新时间： 2024-11-11 06:23:31

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
5页	221K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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2N7002EPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2N7002EPT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-70/SOT-323

FEATURE

* Small surface mounting type. (SC-70/SOT-323)

* High density cell design for low RDS(ON).

* Suitable for high packing density.

* Rugged and reliable.

0.65

1.3±0.1

2.0±0.2

* High saturation current capability.

* Voltage controlled small signal switch.

0.3±0.1

1.25±0.1

CONSTRUCTION

* N-Channel Enhancement

MARKING

* 702E

0.8~1.1

0.05~0.2

0~0.1

0.1Min.

(3)

2.0~2.45

CIRCUIT

(1)

SC-70/SOT-323

Dimensions in millimeters

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

2N7002EPT

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage (R_GS< 1 M

)

Ω

Gate-Source Voltage - Continuous

±20

- Non Repetitive (tp < 50µs)

TA= 25°C

250

190

I_D

Maximum Drain Current - Continuous

- Pulsed

TA= 70°C

TA= 25°C

TA= 70°C

P_D

Maximum Power Dissipation

200

°C

150

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

450

°C

Thermal characteristics

Thermal Resistance, Junction-to-Ambient

°C/W

θJA

2005-6

12 3 4 5

中文翻译

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