Datasheet > 2N7002E_10

2N7002E_10

更新时间： 2022-09-16 16:05:43

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	78K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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2N7002E_10 数据手册

2N7002E

1.0

0.8

2.0

1.6

T_A= -55°C

T_A= 25°C

0.6

0.4

0.2

1.2

T_A= 125°C

0.8

0.4

1.0

200

V_GS, GATE TO SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 2 Drain Current vs. Gate-Source Voltage

Fig. 1 On-Region Characteristics

V_GS= 4.5V

I_D= 250mA

I_D= 75mA

V_GS= 10V

0.2

I_D, DRAIN CURRENT (A)

Fig. 4 On Resistance vs. Drain Current

0.6

0.8

0.4

V_GS, GATE TO SOURCE VOLTAGE (V)

Fig. 3 On Resistance vs. Gate-Source Voltage

350

300

250

V_GS= 4.5V @ 200mA

200

150

100

V_GS= 10V @ 250mA

175

T_A, AMBIENT TEMPERATURE (°C)

Fig. 6 Max Power Dissipation vs. Ambient Temperature

-50

150

-75

50 75

T_J, JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance vs. Junction Temperature

150

100 125

-25

100 125

2 of 4

www.diodes.com

June 2010

2N7002E

Document number: DS30376 Rev. 8 - 2

123 4

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