Datasheet > 2N7002E9/3K

2N7002E9/3K

更新时间： 2024-11-10 23:19:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	263K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB

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中文翻译

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数据手册

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2N7002E9/3K 数据手册

2N7002

DMOS Transistors (N-Channel)

TO-263AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

Pin Configuration

1. Gate

2. Source

3. Drain

0.037 (0.95)

0.079 (2.0)

.037(0.95)

0.035 (0.9)

0.031 (0.8)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Di_Dm_ime_en_ns_si_ioo_nn_ss_inin_incin_hec_sh_ae_ns_da_(mn_id_llim(m_eteil_rl_sim₎eters)

Mechanical Data

Features

Case: SOT-23 Plastic Package

• High input impedance

Weight: approx. 0.008g

• High-speed switching

Packaging Codes/Options:

• No minority carrier storage time

• CMOS logic compatible input

• No thermal runaway

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• No secondary breakdown

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DSS

V_DGS

V_GS

Limit

Unit

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Power Dissipation at T_C= 50°C

I_D

250

P_tot

0.310⁽¹⁾

Thermal Resistance Junction to Substrate

Backside

R_ΘSB

320⁽¹⁾

°C/W

Thermal Resistance Junction to Ambiant Air

Junction Temperature

R_ΘJA

T_j

450⁽¹⁾

150

°C/W

°C

Storage Temperature Range

T_S

–55 to +150

°C

Note:

(1) Ceramic Substrate 0.7mm; 2.5cm²area.

5/5/00

12 3 4 5

中文翻译

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