2N7002F

更新时间： 2024-02-26 12:13:19

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2N7002F 技术参数

2N7002F

TrenchMOS™ Logic Level FET

Rev. 01 — 11 February 2002

Product data

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

2N7002F in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1:

Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

03ab44

03ab30

SOT23

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

12 3 4 5 6 7...11

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型号	品牌	描述	获取价格	数据表
2N7002F2	YANGJIE	Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Meta	获取价格
2N7002F215	NXP	N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench	获取价格
2N7002FN3	PANJIT	60V N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
2N7002FT/R	NXP	TRANSISTOR 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, SOT-23, 3	获取价格
2N7002-G	COMCHIP	MOSFET	获取价格
2N7002-G	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FETs	获取价格