Datasheet > 2N7002ELT1

2N7002ELT1

更新时间： 2024-09-25 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	324K
描述
310 mAmps, 60 Volts

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数据手册

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2N7002ELT1 数据手册

WILLAS

2N7002ELT1

Small Signal MOSFET

310 mAmps, 60 Volts

N–Channel SOT–23

•

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

SOT– 23

310 mAMPS

60 VOLTS

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

V_DSS

Value

Unit

Vdc

_DS(on)= 1.5

GS(th)

= 1.8

Drain–Gate Voltage (R_GS= 1.0 MΩ)

V_DGR

Vdc

Drain Current

N - Channel

– Continuous T_C= 25°C (Note 1.)

– Continuous

I_D

310

mAdc

–

I_DM

Pulse t < 10us

1200

Gate–Source Voltage

– Continuous

±20

±40

V_GS

V_GSM

Vdc

Vpk

– Non–repetitive (t ≤ 50 µs)

MARKING DIAGRAM

& PIN ASSIGNMENT

THERMAL CHARACTERISTICS

Characteristic

Drain

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 2.) T_A= 25°C

P_D

225

1.8

mW/°C

801

Derate above 25°C

Thermal Resistance, Junction to Ambient

R_θJA

P_D

556

300

°C/W

Gate

Source

Total Device Dissipation

801

= Device Code

= Work Week

Alumina Substrate,(Note 3.) T = 25°C

Derate above 25°C

mW/°C

2.4

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J,

–o55 to

+150

stg

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. FR–5 = 1.0 x 0.75 x 0.062 in.

3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

ORDERING INFORMATION

Device

2N7002ELT1

Marking

Shipping

3000 Tape & Reel

801

2012-10

WILLAS ELECTRONIC CORP.

12 3 4

中文翻译

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