RoHS
COMPLIANT
2N7002E
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
0.3A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<1.4Ω
<1.6Ω
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
±30
V
V
0.3
TA=25℃
Drain Current
ID
A
A
0.19
1.5
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
0.3
TA=25℃
PD
W
℃
0.1
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
350
420
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
2N7002E
F2
7002.
3000
30000
120000
7“ reel
1 / 8
S-E276
Rev.1.0,12-Dec-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com