2N7002E

更新时间： 2024-11-21 11:55:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	100K
描述
Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23

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中文翻译

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数据手册
替代型号

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2N7002E 数据手册

2N7002E

Small Signal MOSFET

60 V, 310 mA, Single, N−Channel, SOT−23

Features

• Low R

DS(on)

http://onsemi.com

• Small Footprint Surface Mount Package

• Trench Technology

• This is a Pb−Free Device

DS(on)

MAX

I MAX

(Note 1)

(BR)DSS

60 V

3.0 W @ 4.5 V

2.5 W @ 10 V

310 mA

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

Simplified Schematic

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

±20

Drain Current (Note 1)

Steady State

T = 25°C

260

190

T = 85°C

(Top View)

t < 5 s

T = 25°C

310

220

T = 85°C

MARKING DIAGRAM

& PIN ASSIGNMENT

Power Dissipation (Note 1)

Steady State

t < 5 s

300

420

Drain

Pulsed Drain Current (t = 10 ms)

1.2

Operating Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

STG

703 W

SOT−23

Source Current (Body Diode)

300

260

CASE 318

STYLE 21

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

Gate

Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

703

= Device Code

= Work Week

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Characteristic

Symbol

Max

Unit

†

Device

Package

Shipping

Junction−to−Ambient − Steady State

(Note 1)

417

°C/W

2N7002ET1G

SOT−23

(Pb−Free)

3000/Tape & Reel

Junction−to−Ambient − t ≤ 5 s (Note 1)

300

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

sq [1 oz] including traces)

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

April, 2007 − Rev. 1

2N7002E/D

12 3 4 5

中文翻译

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2N7002E 替代型号

型号	品牌	替代类型	描述	数据表
2V7002LT1G	ONSEMI	类似代替	Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23
2N7002LT3G	ONSEMI	类似代替	Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
2N7002LT1G	ONSEMI	类似代替	Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

与2N7002E相关器件

型号	品牌	获取价格	描述	数据表
2N7002E_10	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E_11	ONSEMI	获取价格	Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23
2N7002E_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
2N7002E-13	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
2N7002E-13-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
2N7002-E3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
2N7002E-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
2N7002E-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E8/10K	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB
2N7002E9/3K	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB

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