Datasheet > 2N7002E

2N7002E

更新时间： 2024-11-18 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体栅极晶体管开关光电二极管
页数	文件大小	规格书
1页	121K
描述
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance

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2N7002E 数据手册

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Product specification

2N7002E

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta=25

Parameter

Symbol

VDSS

Rating

Unit

Drain-Source Voltage

VDGR

Drain-Gate Voltage

RGS

1.0 m

Gate-Source Voltage -Continuous

Pulsed

VGSS

Drain Current -Continuous

Power Dissipation

240

300

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

417

Tj, TSTG

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VGS = 0V, ID = 10

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = 25

@ TC = 125

VDSS

1.0

500

2.5

IDSS

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

VGS = 15V, VDS = 0V

VDS = VGS, ID = 250mA

VGS = 10V, ID = 250mA

VGS = 4.5V, ID = 200mA

VGS = 10V, VDS = 7.5V

VDS =10V, ID = 0.2A

Gate Threshold Voltage

VGS(th)

1.0

1.6

2.0

1.0

RDS (ON)

Static Drain-Source On-Resistance @ Tj = 25

On-State Drain Current

Forward Transconductance

Input Capacitance

ID(ON)

gFS

0.8

Ciss

VDS = 25V, VGS = 0V,f = 1.0MHz

Output Capacitance

Coss

Crss

Reverse Transfer Capacitance

2.0

5.0

Turn-On Delay Time

Turn-Off Delay Time

tD(ON)

7.0

VDD = 30V, ID = 0.2A,RL = 150 ,VGEN

= 10V,RGEN = 25

tD(OFF)

Marking

K7B

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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