是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | SOT-23 |
包装说明: | , | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 7.35 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.25 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N7002E-T1-E3 | VISHAY |
类似代替 |
N-Channel 60 V (D-S) MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7002E_10 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002E_11 | ONSEMI |
获取价格 |
Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 | |
2N7002E_15 | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7002E-13 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta | |
2N7002E-13-F | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7002-E3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
2N7002E-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta | |
2N7002E-7-F | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002E8/10K | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB | |
2N7002E9/3K | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |