Datasheet > 2N7002E

2N7002E

更新时间： 2024-11-21 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管场效应晶体管开关光电二极管
页数	文件大小	规格书
1页	45K
描述
N-Channel Enhanceent Mode Field Effect Transistor

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中文翻译

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数据手册

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2N7002E 数据手册

SMD Type

MOSFET

N-Channel Enhanceent Mode

Field Effect Transistor

2N7002E

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta=25

Parameter

Symbol

VDSS

Rating

Unit

Drain-Source Voltage

VDGR

Drain-Gate Voltage

RGS

1.0 m

Gate-Source Voltage -Continuous

Pulsed

VGSS

Drain Current -Continuous

Power Dissipation

240

300

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

417

Tj, TSTG

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VGS = 0V, ID = 10

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = 25

@ TC = 125

VDSS

1.0

500

2.5

IDSS

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

VGS = 15V, VDS = 0V

VDS = VGS, ID = 250mA

VGS = 10V, ID = 250mA

VGS = 4.5V, ID = 200mA

VGS = 10V, VDS = 7.5V

VDS =10V, ID = 0.2A

Gate Threshold Voltage

VGS(th)

1.0

1.6

2.0

1.0

RDS (ON)

Static Drain-Source On-Resistance @ Tj = 25

On-State Drain Current

Forward Transconductance

Input Capacitance

ID(ON)

gFS

0.8

Ciss

VDS = 25V, VGS = 0V,f = 1.0MHz

Output Capacitance

Coss

Crss

Reverse Transfer Capacitance

2.0

5.0

Turn-On Delay Time

Turn-Off Delay Time

tD(ON)

7.0

VDD = 30V, ID = 0.2A,RL = 150 ,VGEN

= 10V,RGEN = 25

tD(OFF)

Marking

K7B

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与2N7002E相关器件

型号	品牌	获取价格	描述	数据表
2N7002E_10	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E_11	ONSEMI	获取价格	Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23
2N7002E_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
2N7002E-13	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
2N7002E-13-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
2N7002-E3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
2N7002E-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
2N7002E-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E8/10K	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB
2N7002E9/3K	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB