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XP132A01A0SR PDF预览

XP132A01A0SR

更新时间: 2024-11-08 07:56:51
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
4页 159K
描述
P-Channel Power MOS FET

XP132A01A0SR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84湿度敏感等级:1
Base Number Matches:1

XP132A01A0SR 数据手册

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11S_16XP132A01AOSR 02.9.12 3:57 PM ページ 747  
Power MOS FET  
NP-Channel Power MOS FET  
NDMOS Structure  
■Applications  
GNotebook PCs  
GCellular and portable phones  
GOn-board power supplies  
GLi-ion battery systems  
NLow On-State Resistance: 0.105(max)  
NUltra High-Speed Switching  
NSOP-8 Package  
■General Description  
■Features  
The XP132A01A0SR is a P-Channel Power MOS FET with low on-  
state resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently set  
thereby saving energy.  
Low on-state resistance : Rds(on)=0.075(Vgs=-10V)  
: Rds(on)=0.105(Vgs=-5.5V)  
Ultra high-speed switching  
Operational Voltage  
: -5.5V  
The small SOP-8 package makes high density mounting possible.  
High density mounting : SOP-8  
■Pin Configuration  
■Pin Assignment  
S
D
D
D
D
1
8
7
6
5
PIN NUMBER  
PIN NAME  
FUNCTION  
S�  
2
S�  
G�  
D�  
1 ~3  
4
Source  
Gate  
S
3
4
5 ~8  
Drain  
G
SOP-8�  
(TOP VIEW)�  
■Equivalent Circuit  
■Absolute Maximum Ratings  
11  
Ta=25  
UNITS  
:
PARAMETER  
SYMBOL  
RATINGS  
1
2
3
4
8
7
6
5
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (DC)  
Vdss  
Vgss  
Id  
-30  
20  
-5  
V
V
A
A
A
Drain Current (Pulse)  
Reverse Drain Current  
Idp  
-15  
-5  
Idr  
P-Channel MOS FET�  
(1 device built-in)  
Continuous Channel  
Power Dissipation (note)  
Pd  
2.5  
W
Channel Temperature  
Storage Temperature  
Tch  
150  
:
:
Tstg  
-55~150  
Note: When implemented on a glass epoxy PCB  
747  

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