是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.3 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 19 A |
最大漏极电流 (ID): | 19 A | 最大漏源导通电阻: | 0.0063 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
最大脉冲漏极电流 (IDM): | 150 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2721GR-E2-A | RENESAS |
获取价格 |
19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8 | |
UPA2723T1A-E1-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2723T1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2723UT1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2723UT1A-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2723UT1A-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2725T1A-E1-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2725T1A-E1-AZ | NEC |
获取价格 |
Switching N-Channel Power MOSFET, HVSON, /Embossed Tape | |
UPA2725T1A-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
UPA2725UT1A-E1-AY | RENESAS |
获取价格 |
UPA2725UT1A-E1-AY |