Datasheet > UPA2211T1M-T2-AT

UPA2211T1M-T2-AT

更新时间： 2024-09-15 21:12:51

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	164K
描述
Power Field-Effect Transistor, 7.5A I(D), 12V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, VSOF, 8 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPA2211T1M-T2-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2211T1M

P-CHANNEL MOS FET

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2211T1M is P-channel MOS Field Effect Transistor designed

for power management applications of portable equipments, such as

load switch.

2.9 0.1

0.65

0.145 0.05

0 to 0.025

FEATURES

• Low on-state resistance

R^DS(on)1= 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)

R^DS(on)2= 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)

R^DS(on)3= 66 mΩ MAX. (VGS = −1.8 V, ID = −3.8 A)

• Built-in gate protection diode

0.32 0.05

0.05 M S A

1, 2, 3, 6, 7, 8: Drain

• −1.8 V Gate drive available

: Gate

: Source

0.05 S

ORDERING INFORMATION

PART NUMBER

μ PA2211T1M-T1-AT

μ PA2211T1M-T2-AT

PACKING

PACKAGE

Note

8 mm embossed taping

3000 p/reel

8-pin VSOF (1629)

0.011 g TYP.

Note Pb-free (This product does not contain Pb in external electrode and

other parts.)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

−12

EQUIVALENT CIRCUIT

m7.5

m30

1.1

Drain

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 5 sec) ^Note2

Channel Temperature

°C

Body

Diode

Gate

P^T2

2.5

T^ch

150

Gate

Protection

Storage Temperature

T^stg

−55 to +150 °C

Diode

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G19452EJ1V0DS00 (1st edition)

Date Published September 2008 NS

Printed in Japan

2008

12 3 4 5 6

中文翻译

下载PDF

与UPA2211T1M-T2-AT相关器件

型号	品牌	获取价格	描述	数据表
UPA2350BT1G-E4-A	NEC	获取价格	Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2350BT1P-E4-A	RENESAS	获取价格	UPA2350BT1P-E4-A
UPA2350T1G-E4-A	NEC	获取价格	Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2350T1P	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2351T1G-E4-A	NEC	获取价格	Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2352BT1G-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2352BT1P-E4-A	RENESAS	获取价格	UPA2352BT1P-E4-A
UPA2352T1G-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2352T1P-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2353	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR

与UPA2211T1M-T2-AT相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

3
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

3
SL74HC10N：高性能三输入与非门解析
2024-09-03

83
AIC1781A 电池充电控制器深度解析
2024-09-03

75

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA2211T1M-T2-AT

UPA2211T1M-T2-AT 数据手册

与UPA2211T1M-T2-AT相关器件

与UPA2211T1M-T2-AT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA2211T1M-T2-AT

UPA2211T1M-T2-AT 数据手册

与UPA2211T1M-T2-AT相关器件

与UPA2211T1M-T2-AT相关文章

您还可以找

您在本页遇到什么问题？