Datasheet > UPA2373T1P

UPA2373T1P

更新时间： 2024-09-15 12:47:15

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	223K
描述
Dual Drain common, N-channel MOSFET 24V, 6A, 23.0m

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UPA2373T1P 数据手册

Preliminary Data Sheet

μPA2373T1P

Dual (Drain common), N-channel MOSFET

R07DS0674EJ0101

Rev.1.01

24V, 6A, 23.0mΩ

Aug 19, 2013

DESCRIPTION

The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source.

The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and so on. Best suite for single cell LiB application.

FEATURES

•

2.5 V drive available

Low on-state resistance

⎯ R_SS(on)1= 23.0 mΩ MAX. (V_GS= 4.5 V, I_S= 3.0 A)

⎯ R_SS(on)2= 24.0 mΩ MAX. (V_GS= 4.0 V, I_S= 3.0 A)

⎯ R_SS(on)3= 25.0 mΩ MAX. (V_GS= 3.8 V, I_S= 3.0 A)

⎯ R_SS(on)4= 30.0 mΩ MAX. (V_GS= 3.1 V, I_S= 3.0 A)

⎯ R_SS(on)4= 39.0 mΩ MAX. (V_GS= 2.5 V, I_S= 3.0 A)

Built-in G-S protection diode against ESD

•

ORDERING INFORMATION

Part No.

μPA2373T1P-E4-A^∗

Lead Plating

Ni/Au

Packing

Reel 5000 p/reel

Package

4-pin EFLIP-LGA

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C)

Item

Symbol

V_SSS

Ratings

24.0

Unit

Source to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Source Current (DC) ^∗

Source Current (pulse) ^∗

Total Power Dissipation (2 units) ^∗

V_GSS

I_S(DC)

I_S(pulse)

P_T1

±12.0

±6.0

±60

1.3

°C

Channel Temperature

Storage Temperature

T_ch

150

T_stg

−55 to +150

Note: ^∗1. Mounted on ceramic board of 50 cm²×1.0 mmt

^∗2. PW ≤ 10 μs, Duty Cycle ≤ 1%

R07DS0674EJ0101 Rev.1.01

Aug 19, 2013

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