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UPA2450CTL-E2-A

更新时间： 2024-11-20 03:57:07
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管ISM频段
页数 文件大小 规格书
8页 163K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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UPA2450CTL-E2-A 技术参数

是否Rohs认证：符合生命周期：Transferred
包装说明：4521, HWSON-7Reach Compliance Code：compliant
风险等级：5.68Is Samacsys：N
外壳连接：DRAIN配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：8.6 A
最大漏源导通电阻：0.0275 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F6JESD-609代码：e6
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA2450CTL-E2-A 数据手册

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DATA SHEET  
MOS FIELD EμFFEPCTATR2A4NS5IS0TOCR  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The μ PA2450C is a switching device, which can be driven directly  
by a 2.5 V power source.  
1
2
3
6
5
4
The μ PA2450C features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such as  
power switch of portable machine and so on.  
FEATURES  
• 2.5 V drive available  
4.4±0.1  
5.0±0.1  
• Low on-state resistance  
RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)  
RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)  
RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)  
RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)  
• Built-in G-S protection diode against ESD  
7
(0.15)  
(0.9)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20.0  
12.0  
V
V
(0.5)  
(2.2)  
Each lead has same dimensions.  
8.6  
A
Drain Current (pulse) Note2  
70.0  
A
1,2: Source 1  
3: Gate 1  
7: Drain  
5,6: Source 2  
4: Gate 2  
Total Power Dissipation (2 units) Note1  
Total Power Dissipation (2 units) Note3  
Channel Temperature  
2.5  
W
W
°C  
°C  
PT2  
0.7  
EQUIVALENT CIRCUIT  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
Drain1  
Drain2  
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mmt  
2. PW ≤ 10 μs, Duty Cycle ≤ 1%  
Body  
Diode  
Body  
Diode  
Gate1  
Gate2  
Gate  
3. Mounted on FR-4 board of 50 cm2 x 1.1 mmt  
Gate  
Protection  
Diode  
Protection  
Diode  
Source1  
Source2  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
PACKING  
PACKAGE  
μ PA2450CTL-E1-A Note  
μ PA2450CTL-E2-A Note  
Reel  
Sn-Bi  
6PIN HWSON (4521)  
3000 p/reel  
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G18792EJ1V0DS00 (1st edition)  
Date Published June 2007 NS  
Printed in Japan  
2007  
12345678

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