UPA2502

更新时间： 2024-10-29 22:38:43

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
7页	148K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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数据手册

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UPA2502 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA2502

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µ PA2502, which has a heat spreader, is N-channel

MOS Field Effect Transistor designed for DC/DC converter

and power management applications of notebook computers.

FEATURES

0.10 S

• µ PA2502 has a thin surface mount package with a heat

spreader. The land size is same as 8-pin TSSOP.

• Low on-state resistance

5.8 0.1

6.4 0.1

R^DS(on)1= 12.0 mΩ MAX. (VGS = 10.0 V, ID = 7.0 A)

R^DS(on)2= 18.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)

• Low C^iss: 760 pF TYP. (VDS = 10.0 V, VGS = 0 V)

ORDERING INFORMATION

1, 2, 3 : Source

: Gate

PART NUMBER

PACKAGE

5, 6, 7, 8: Drain

µ PA2502TM

8PIN HWSON

0.75 0.15

4.15 0.2

0.85 0.15

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) ^Note1

VDSS

VGSS

ID(DC)

I^D(pulse)

30.0

±20.0

±13.0

±52.0

2.7

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note2

Total Power Dissipation ^Note1

Channel Temperature

°C

Drain

T^ch

150

−55 to +150

13.0

Storage Temperature

Tstg

I^AS

E^AS

Body

Diode

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Gate

16.9

Gate

Protection

Diode

Notes 1. Mounted on FR-4 board of 25 cm²x 1.6 mm, PW ≤ 10 sec

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

Source

3. Starting T^ch= 25°C, VDD = 15.0 V, RG = 25 Ω, VGS = 20.0 → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16681EJ1V0DS00 (1st edition)

Date Published September 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7

中文翻译

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与UPA2502相关器件

型号	品牌	获取价格	描述	数据表
UPA2502TM	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2503	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2503TM	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2503TM	RENESAS	获取价格	16A, 30V, 0.0151ohm, N-CHANNEL, Si, POWER, MOSFET, TSSOP-8
UPA2510	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2510TM	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2520T1H-T1-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
UPA2520T1H-T2-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
UPA2521T1H-T1-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
UPA2521T1H-T2-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o

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