Datasheet > UPA2600T1R-E2-AX

UPA2600T1R-E2-AX

更新时间： 2024-11-24 12:47:15

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	245K
描述
N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

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UPA2600T1R-E2-AX 数据手册

Data Sheet

μPA2600T1R

N-CHANNEL MOSFET

R07DS0998EJ0100

Rev.1.00

Jan 15, 2013

20 V, 7.0 A, 13.8 mΩ

Description

The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application.

This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

Features

•

High Drain to Source Voltage

⎯ V_DSS= 20 V (V_GS= 0 V, T_A= 25°C)

2.5V drive available

Low on-state resistance

•

⎯ R_{DS (on)1}= 13.8 mΩ MAX. (V_GS= 4.5 V, I_D= 3.5 A)

⎯ R_{DS (on)2}= 19.1 mΩ MAX. (V_GS= 2.5 V, I_D= 3.5 A)

Built-in gate protection diode

•

6pinHUSON2020

Lead-free and Halogen-free

Ordering Information

Part Number

μPA2600T1R-E2-AX^∗

Package

6pinHUSON2020

Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25 °C)

±12

±7.0

Drain Current (pulse) ^∗

±28

Total Power Dissipation (5 s) ^∗

2.4

°C

Channel Temperature

T_ch

150

Storage Temperature

T_STG

–55 to +150

Notes: ∗1. PW≤10 μs, Duty Cycle≤1%

∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt

R07DS0998EJ0100 Rev.1.00

Jan 15, 2013

Page 1 of 6

12 3 4 5 6 7

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