Datasheet > UPA2672T1R

UPA2672T1R

更新时间： 2024-11-01 12:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	245K
描述
DUAL P-CHANNEL MOSFET -12 V, -4.0 A, 67 m

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UPA2672T1R 数据手册

Data Sheet

μPA2672T1R

DUAL P-CHANNEL MOSFET

R07DS0834EJ0101

Rev.1.01

Apr 15, 2013

–12 V, –4.0 A, 67 mΩ

Description

The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application.

This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

Features

•

–1.8V drive available

Low on-state resistance

⎯ R_{DS (on)1}= 67 mΩ MAX. (V_GS= –4.5 V, I_D= –2.0 A)

⎯ R_{DS (on)2}= 92 mΩ MAX. (V_GS= –2.5 V, I_D= –2.0 A)

⎯ R_{DS (on)3}= 159 mΩ MAX. (V_GS= –1.8 V, I_D= –2.0 A)

Built-in gate protection diode

•

Lead-free and Halogen-free

6pinHUSON2020(Dual)

Ordering Information

Part Number

μPA2672T1R-E2-AX^∗

Package

6pinHUSON2020

Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

–12

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

m10

m4.0

Drain Current (pulse) ^∗

m16

Total Power Dissipation (1 unit, 5 s) ^∗

Total Power Dissipation (2 units, 5 s) ^∗

1.5

°C

P_T2

2.3

Channel Temperature

T_ch

150

Storage Temperature

T_STG

–55 to +150

Notes: ∗1. PW≤10 μs, Duty Cycle≤1%

∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt

R07DS0834EJ0101 Rev.1.01

Apr 15, 2013

Page 1 of 6

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