Datasheet > UPA2702

UPA2702

更新时间： 2024-09-12 23:39:35

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UPA2702TP Data Sheet \| Data Sheet[05/2002]

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中文翻译

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UPA2702 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2702TP

SWITCHING

N-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

1, 2, 3

; Source

; Gate

The µPA2702TP, which has a heat spreader, is N-Channel

MOS Field Effect Transistor designed for DC/DC converter and

power management applications of notebook computers.

5, 6, 7, 8, 9 ; Drain

6.0 ±0.3

0.8 ±0.2

4.4 ±0.15

FEATURES

• Low on-state resistance

+0.17

–0.2

5.2

DS(on)1

= 9.5 mΩ MAX. (V = 10 V, I = 7.0 A)

DS(on)2

= 15.1 mΩ MAX. (V = 4.5 V, I = 7.0 A)

0.10

1.27 TYP.

iss

• Low C : C = 900 pF TYP. (V = 10 V, V = 0 V)

+0.10

0.40

0.12 M

–0.05

• Small and surface mount package (Power HSOP8)

2.0 ±0.2

ORDERING INFORMATION

PART NUMBER

PACKAGE

4.1 MAX.

µPA2702TP

Power HSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, Unless otherwise noted, All terminals are connected.)

DSS

Drain to Source Voltage (V = 0 V)

GSS

Gate to Source Voltage (V = 0 V)

±20

EQUIVALENT CIRCUIT

D(DC)1

D(DC)2

Drain Current (DC) (T = 25°C)

±35

Drain

Note1

±14

Drain Current (DC) (T = 25°C)

Drain Current (pulse) ^Note2

D(pulse)

±65

Body

Diode

Total Power Dissipation (T = 25°C)

°C

Gate

Note1

Total Power Dissipation (T = 25°C)

Gate

Protection

Diode

Channel Temperature

150

Source

stg

Storage Temperature

–55 to +150

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

25.6

Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

★

3. Starting T = 25°C, V = 15 V, R = 25 Ω, L = 100 µH, V = 20 → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2002 NS CP(K)

Printed in Japan

G15845EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

2002

12 3 4 5 6 7 8

中文翻译

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与UPA2702相关器件

型号	品牌	获取价格	描述	数据表
UPA2702GR	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA2702GR-A	NEC	获取价格	暂无描述
UPA2702GR-E1	RENESAS	获取价格	UPA2702GR-E1
UPA2702GR-E2	RENESAS	获取价格	UPA2702GR-E2
UPA2702TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA2702TP-AZ	NEC	获取价格	Power Field-Effect Transistor, 35A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Me
UPA2703	ETC	获取价格	UPA2703GR Preliminary Product Information \| Preliminary Product Information[07/2002]
UPA2703GR	RENESAS	获取价格	17A, 30V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8
UPA2703GR	NEC	获取价格	Power Field-Effect Transistor, 17A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Me
UPA2703GR-A	RENESAS	获取价格	Power Field-Effect Transistor, 17A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Me

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