UPA2702GR-A

更新时间： 2024-10-30 13:01:11

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	63K
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中文翻译

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数据手册

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UPA2702GR-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2702GR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA2702GR is N-Channel MOS Field Effect Transistor

designed for DC/DC converters and power management

applications of notebook computers.

1, 2, 3

; Source

; Gate

5, 6, 7, 8 ; Drain

FEATURES

• Low on-state resistance

6.0 ±0.3

4.4

DS(on)1

= 9.5 mΩ MAX. (V = 10 V, I = 7.0 A)

5.37 MAX.

0.8

DS(on)2

= 15.1 mΩ MAX. (V = 4.5 V, I = 7.0 A)

iss

• Low C : C = 900 pF TYP. (V = 10 V, V = 0 V)

• Small and surface mount package (Power SOP8)

0.5 ±0.2

0.10

1.27 0.78 MAX.

ORDERING INFORMATION

+0.10

–0.05

0.40

0.12 M

PART NUMBER

PACKAGE

µPA2702GR

Power SOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

DSS

Drain to Source Voltage (V = 0 V)

GSS

Gate to Source Voltage (V = 0 V)

±20

EQUIVALENT CIRCUIT

D(DC)

Drain Current (DC)

±13

Drain

Drain Current (pulse) ^Note1

D(pulse)

±52

Note2

Total Power Dissipation (T = 25°C)

2.0

°C

Body

Channel Temperature

150

Diode

Gate

stg

Storage Temperature

–55 to +150

Single Avalanche Current ^Note3

Gate

Protection

Diode

Single Avalanche Energy ^Note3

Source

16.9

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

3. Starting T = 25°C, V = 15 V, R = 25 Ω, L = 100 µH, V = 20 → 0 V

★

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The mark ★ shows major revised points.

Document No.

Date Published May 2002 NS CP(K)

Printed in Japan

G15724EJ2V0DS00 (2nd edition)

2002

12 3 4 5 6 7 8

中文翻译

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与UPA2702GR-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2702GR-E1	RENESAS	获取价格	UPA2702GR-E1
UPA2702GR-E2	RENESAS	获取价格	UPA2702GR-E2
UPA2702TP	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
UPA2702TP-AZ	NEC	获取价格	Power Field-Effect Transistor, 35A I(D), 30V, 0.0172ohm, 1-Element, N-Channel, Silicon, Me
UPA2703	ETC	获取价格	UPA2703GR Preliminary Product Information \| Preliminary Product Information[07/2002]
UPA2703GR	RENESAS	获取价格	17A, 30V, 0.0076ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8
UPA2703GR	NEC	获取价格	Power Field-Effect Transistor, 17A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Me
UPA2703GR-A	RENESAS	获取价格	Power Field-Effect Transistor, 17A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Me
UPA2704	ETC	获取价格	UPA2704GR Preliminary Product Information \| Preliminary Product Information[07/2002]
UPA2704GR	NEC	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Met

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