Datasheet > UPA2630T1R

UPA2630T1R

更新时间： 2024-11-24 12:47:15

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	247K
描述
P-CHANNEL MOSFET -12 V, -7.0 A, 28 m

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UPA2630T1R 数据手册

Data Sheet

μPA2630T1R

P-CHANNEL MOSFET

R07DS0990EJ0100

Rev.1.00

Dec 27, 2012

–12 V, –7.0 A, 28 mΩ

Description

The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application.

This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

Features

•

–1.8V drive available

Low on-state resistance

⎯ R_{DS (on)1}= 28 mΩ MAX. (V_GS= –4.5 V, I_D= –3.5 A)

⎯ R_{DS (on)2}= 35 mΩ MAX. (V_GS= –2.5 V, I_D= –3.5 A)

⎯ R_{DS (on)2}= 59 mΩ MAX. (V_GS= –1.8 V, I_D= –3.5 A)

Built-in gate protection diode

•

Lead-free and Halogen-free

6pinHUSON2020

Ordering Information

Part Number

μPA2630T1R-E2-AX^∗

Package

6pinHUSON2020

Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T

Ratings

–12

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

m7.0

Drain Current (pulse) ^∗

m28

Total Power Dissipation (5 s) ^∗

2.5

°C

Channel Temperature

T_ch

150

Storage Temperature

T_STG

–55 to +150

Notes: ∗1. PW≤10 μs, Duty Cycle≤1%

∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt

R07DS0990EJ0100 Rev.1.00

Dec 27, 2012

Page 1 of 6

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