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UPA2701 PDF预览

UPA2701

更新时间: 2024-01-04 23:55:43
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UPA2701GR Data Sheet | Data Sheet[05/2002]

UPA2701 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA2701GR  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The µPA2701GR is N-Channel MOS Field Effect Transistor  
designed for DC/DC converters and power management  
applications of notebook computers.  
8
5
1, 2, 3  
4
; Source  
; Gate  
5, 6, 7, 8 ; Drain  
FEATURES  
Low on-state resistance  
RDS(on)1 = 7.5 mMAX. (VGS = 10 V, ID = 7.0 A)  
RDS(on)2 = 11.6 mMAX. (VGS = 4.5 V, ID = 7.0 A)  
Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V)  
Small and surface mount package (Power SOP8)  
6.0 ±0.3  
4.4  
1
4
5.37 MAX.  
0.8  
0.5 ±0.2  
ORDERING INFORMATION  
0.10  
1.27 0.78 MAX.  
PART NUMBER  
PACKAGE  
+0.10  
0.40  
0.12 M  
–0.05  
µPA2701GR  
Power SOP8  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
30  
V
EQUIVALENT CIRCUIT  
±20  
V
±14  
A
Drain  
Drain Current (pulse) Note1  
±56  
A
Total Power Dissipation (TA = 25°C) Note2  
Body  
2.0  
W
°C  
°C  
A
Diode  
Gate  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
14  
Gate  
Protection  
Diode  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
Source  
IAS  
EAS  
19.6  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm  
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 , L = 100 µH, VGS = 20 0 V  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is extemally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.G15714EJ2V0DS00 (2nd edition)  
Date Published May 2002 NS CP(K)  
Printed in Japan  
2002  
©
The mark ! shows major revised points.  

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