Datasheet > UPA2550T1H-T1-AT

UPA2550T1H-T1-AT

更新时间： 2024-10-30 20:48:07

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲光电二极管晶体管
页数	文件大小	规格书
7页	158K
描述
Power Field-Effect Transistor, 5A I(D), 12V, 0.093ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, VSOF, 8 PIN

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技术参数
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UPA2550T1H-T1-AT 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, VSOF, 8 PIN
Reach Compliance Code：	unknown	风险等级：	5.72
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	12 V
最大漏极电流 (ID)：	5 A	最大漏源导通电阻：	0.093 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F8
JESD-609代码：	e3	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	20 A	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	PURE TIN
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA2550T1H-T1-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2550

DUAL P-CHANNEL MOSFET

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2550 is dual P-channel MOSFETs designed for power

management applications of portable equipments, such as load

switch.

2.9 0.1

0.65

0.17 0.05

0 to 0.025

Dual P-channel MOSFETs are assembled in one package, to

contribute minimize the equipments.

FEATURES

• 1.8 V drive available

• Low on-state resistance

0.32 0.05

0.05 M S A

R^DS(on)1= 40 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)

R^DS(on)2= 60 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)

R^DS(on)3= 93 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A)

• Built-in gate protection diode

1: Source1

2: Gate1

3: Source2

4: Gate2

5, 6: Drain2

7, 8: Drain1

• Small and surface mount package (8-pin VSOF (2429))

ORDERING INFORMATION

PART NUMBER

μ PA2550T1H-T1-AT

μ PA2550T1H-T2-AT

LEAD PLATING

Pure Sn

PACKING

PACKAGE

Note

8 mm embossed taping

3000 p/reel

8-pin VSOF (2429)

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

Marking: 2550

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G19179EJ1V0DS00 (1st edition)

Date Published March 2008 NS

Printed in Japan

2008

12 3 4 5 6 7

中文翻译

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与UPA2550T1H-T1-AT相关器件

型号	品牌	获取价格	描述	数据表
UPA2550T1H-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 5A I(D), 12V, 0.093ohm, 2-Element, P-Channel, Silicon, Meta
UPA2560T1H-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA2562T1H-T2-AT	RENESAS	获取价格	4.5A, 30V, 0.07ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2429, VSOF-8
UPA2590T1H-T1-AT	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 0.083ohm, 2-Element, N-Channel and P-Channe
UPA2590T1H-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 0.083ohm, 2-Element, N-Channel and P-Channe
UPA2591T1H-T2-AT	RENESAS	获取价格	4 A, 30 V, 0.07 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2429, VSOF-
UPA2592T1H-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,4A I(D),TSOP
UPA2593T1H-T2-AT	RENESAS	获取价格	4.5 A, 40 V, 0.103 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, VSOF-8
UPA2600T1R	RENESAS	获取价格	N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m
UPA2600T1R-E2-AX	RENESAS	获取价格	N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

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