Datasheet > UPA2520T1H-T1-AT

UPA2520T1H-T1-AT

更新时间： 2024-10-31 08:47:47

品牌	Logo	应用领域
日电电子 - NEC		光电二极管
页数	文件大小	规格书
6页	160K
描述
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, VSOF, 8 PIN

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UPA2520T1H-T1-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2520

N-CHANNEL MOS FET

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The μ PA2520 is N-channel MOS Field Effect Transistor

designed for DC/DC converter and power management

applications of portable equipments.

2.9 0.1

0.65

0.17 0.05

0 to 0.025

FEATURES

• Low on-state resistance

R^DS(on)1= 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A)

R^DS(on)2= 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

• Built-in gate protection diode

0.05 M S A

0.32 0.05

• Small and surface mount package (8-pin VSOF (2429))

• Pb-free (This product does not contain Pb in external electrode

and other parts.)

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

Drain Current (pulse) ^Note1

EQUIVALENT CIRCUIT

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 5 sec) ^Note2

Channel Temperature

1.0

°C

Drain

P^T2

2.2

150

Tch

Body

Storage Temperature

T^stg

−55 to +150

Diode

Gate

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

E^AS

Gate

Protection

Diode

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G19186EJ1V0DS00 (1st edition)

Date Published March 2008 NS

Printed in Japan

2008

12 3 4 5 6

中文翻译

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与UPA2520T1H-T1-AT相关器件

型号	品牌	获取价格	描述	数据表
UPA2520T1H-T2-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
UPA2521T1H-T1-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
UPA2521T1H-T2-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
UPA2550T1H-T1-AT	NEC	获取价格	Power Field-Effect Transistor, 5A I(D), 12V, 0.093ohm, 2-Element, P-Channel, Silicon, Meta
UPA2550T1H-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 5A I(D), 12V, 0.093ohm, 2-Element, P-Channel, Silicon, Meta
UPA2560T1H-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA2562T1H-T2-AT	RENESAS	获取价格	4.5A, 30V, 0.07ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2429, VSOF-8
UPA2590T1H-T1-AT	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 0.083ohm, 2-Element, N-Channel and P-Channe
UPA2590T1H-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 0.083ohm, 2-Element, N-Channel and P-Channe
UPA2591T1H-T2-AT	RENESAS	获取价格	4 A, 30 V, 0.07 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2429, VSOF-

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