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UPA2520T1H-T1-AT PDF预览

UPA2520T1H-T1-AT

更新时间: 2024-11-25 08:47:47
品牌 Logo 应用领域
日电电子 - NEC 光电二极管
页数 文件大小 规格书
6页 160K
描述
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, VSOF, 8 PIN

UPA2520T1H-T1-AT 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
μPA2520  
N-CHANNEL MOS FET  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The μ PA2520 is N-channel MOS Field Effect Transistor  
designed for DC/DC converter and power management  
applications of portable equipments.  
2.9 0.1  
0.65  
A
0.17 0.05  
0 to 0.025  
8
5
FEATURES  
Low on-state resistance  
RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A)  
RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)  
Built-in gate protection diode  
4
0.05 M S A  
1
0.32 0.05  
Small and surface mount package (8-pin VSOF (2429))  
Pb-free (This product does not contain Pb in external electrode  
and other parts.)  
1, 2, 3 : Source  
4
: Gate  
5, 6, 7, 8: Drain  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
V
20  
V
10  
A
Drain Current (pulse) Note1  
EQUIVALENT CIRCUIT  
40  
A
Total Power Dissipation Note2  
Total Power Dissipation (PW = 5 sec) Note2  
Channel Temperature  
1.0  
W
W
°C  
°C  
A
Drain  
PT2  
2.2  
150  
Tch  
Body  
Storage Temperature  
Tstg  
55 to +150  
10  
Diode  
Gate  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
IAS  
EAS  
10  
mJ  
Gate  
Protection  
Diode  
Source  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt  
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G19186EJ1V0DS00 (1st edition)  
Date Published March 2008 NS  
Printed in Japan  
2008  

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