UPA2451

更新时间： 2024-09-15 03:57:07

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	80K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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数据手册

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UPA2451 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2451

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA2451 is a switching device which can be driven

directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

4.4±0.1

5.0±0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

DS(on)4

= 20 mΩ MAX. (V = 4.5 V, I = 4.0 A)

= 21 mΩ MAX. (V = 4.0 V, I = 4.0 A)

= 25 mΩ MAX. (V = 3.1 V, I = 4.0 A)

= 32 mΩ MAX. (V = 2.5 V, I = 4.0 A)

(0.9)

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA2451TL

6PIN HWSON (4521)

(0.15)

(3.05)

(0.50)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

DSS

Drain to Source Voltage (V = 0 V)

±12

±8.2

±80

2.5

GSS

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC) (T = 25°C)

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note1

Total Power Dissipation (2unit) ^Note2

Total Power Dissipation (2unit) ^Note3

Channel Temperature

D(pulse)

°C

Drain1

Drain2

0.7

150

Body

Diode

Body

Diode

stg

Storage Temperature

–55 to +150 °C

Gate1

Gate2

Gate

Protection

Diode

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. T^A= 25°C Mounted on ceramic board

3. T^A= 25°C Mounted on FR4 board

Gate

Protection

Diode

Source1

Source2

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2002 NS CP(K)

Printed in Japan

G15621EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA2451相关器件

型号	品牌	获取价格	描述	数据表
UPA2451B	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451BTL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451C	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451CTL-E1-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451CTL-E2-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451TL-A	NEC	获取价格	暂无描述
UPA2452	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	RENESAS	获取价格	7800mA, 24V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HWSON-6

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