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UPA2451CTL-E2-A

更新时间： 2024-11-20 03:57:07
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管开关光电二极管
页数 文件大小 规格书
8页 176K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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UPA2451CTL-E2-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-F6针数：7
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.29外壳连接：DRAIN
配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：8.2 A最大漏源导通电阻：0.032 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
JESD-609代码：e6元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA2451CTL-E2-A 数据手册

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DATA SHEET  
MOS FIELD EμFFEPCTATR2A4NS5IS1TOCR  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The μ PA2451C is a switching device, which can be driven directly  
by a 2.5 V power source.  
1
2
3
6
5
4
The μ PA2451C features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such as  
power switch of portable machine and so on.  
FEATURES  
• 2.5 V drive available  
4.4±0.1  
5.0±0.1  
• Low on-state resistance  
RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)  
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)  
RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)  
RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)  
• Built-in G-S protection diode against ESD  
7
(0.15)  
(0.9)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30.0  
12.0  
V
V
(0.5)  
(2.2)  
Each lead has same dimensions.  
8.2  
A
Drain Current (pulse) Note2  
60.0  
A
1,2: Source 1  
3: Gate 1  
7: Drain  
5,6: Source 2  
4: Gate 2  
Total Power Dissipation (2 units) Note1  
Total Power Dissipation (2 units) Note3  
Channel Temperature  
2.5  
W
W
°C  
°C  
PT2  
0.7  
Tch  
150  
EQUIVALENT CIRCUIT  
Storage Temperature  
Tstg  
−55 to +150  
Drain1  
Drain2  
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mmt  
2. PW ≤ 10 μs, Duty Cycle ≤ 1%  
Body  
Diode  
Body  
Diode  
3. Mounted on FR-4 board of 50 cm2 x 1.1 mmt  
Gate1  
Gate2  
Gate  
Gate  
Protection  
Diode  
Protection  
Diode  
ORDERING INFORMATION  
Source1  
Source2  
LEAD PLATING  
PACKING  
PART NUMBER  
PACKAGE  
μ PA2451CTL-E1-A Note  
μ PA2451CTL-E2-A Note  
Reel  
Sn-Bi  
6PIN HWSON (4521)  
3000 p/reel  
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G18793EJ1V0DS00 (1st edition)  
Date Published July 2007 NS  
Printed in Japan  
2007  
12345678

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 		N-Channel Mos Field Effect Transistor For Switching, HWSON, /Embossed Tape
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UPA2452TL-E2-A RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC

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