Datasheet > UPA2460T1Q-E1-AX

UPA2460T1Q-E1-AX

更新时间： 2024-11-21 05:15:47

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	228K
描述
N-Channel Mos Field Effect Transistor For Switching, HUSON, /Embossed Tape

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UPA2460T1Q-E1-AX 数据手册

Preliminary Data Sheet

R07DS0185EJ0100

Rev.1.00

μ PA2460T1Q

MOS FIELD EFFECT TRANSISTOR

Description

Dec 06, 2010

The μPA2460T1Q is a switching device, which can be driven directly by a 2.5 V power source.

The μPA2460T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and so on.

Features

•

2.5 V drive available

Low on-state resistance

⎯ R_DS(on)1= 17.5 mΩ MAX. (V_GS= 4.5 V, I_D= 3.0 A)

⎯ R_DS(on)2= 18.5 mΩ MAX. (V_GS= 4.0 V, I_D= 3.0 A)

⎯ R_DS(on)3= 22.0 mΩ MAX. (V_GS= 3.1 V, I_D= 3.0 A)

⎯ R_DS(on)4= 27.5 mΩ MAX. (V_GS= 2.5 V, I_D= 3.0 A)

Built-in G-S protection diode against ESD

•

Ordering Information

Part No.

μ PA2460T1Q-E1-AX ^∗

LEAD PLATING

Ni/Pd/Au

PACKING

8 mm embossed taping

3000 p/reel

Package

8-pin HUSON (2720)

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

N-CHANNEL

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

6.5

Drain Current (DC) ^∗

Drain Current (pulse) ^∗

Total Power Dissipation (2 unit) ^∗

1.0

°C

Channel Temperature

Storage Temperature

T_ch

150

T_stg

−55 to +150

Notes: ^∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

^∗2. PW ≤ 10 μs, Duty Cycle ≤ 1%

R07DS0185EJ0100 Rev.1.00

Dec 06, 2010

Page 1 of 7

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