是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.2 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 24 V |
最大漏极电流 (Abs) (ID): | 7.8 A | 最大漏极电流 (ID): | 7.8 A |
最大漏源导通电阻: | 0.03 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2452TL(1)-E1-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC |
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UPA2452TL-E1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC |
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UPA2452TL-E1-A | RENESAS |
获取价格 |
N-Channel Mos Field Effect Transistor For Switching, HWSON, /Embossed Tape |
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UPA2452TL-E2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC |
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UPA2452TL-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC |
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UPA2454TL-E2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,15A I(D),LLCC |
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UPA2460T1Q-E1-A | RENESAS |
获取价格 |
6500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, HUSON-8 |
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UPA2460T1Q-E1-AX | RENESAS |
获取价格 |
N-Channel Mos Field Effect Transistor For Switching, HUSON, /Embossed Tape |
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UPA2502 | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA2502TM | NEC |
获取价格 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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