UPA2451TL-A

更新时间： 2024-11-20 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	80K
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中文翻译

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数据手册

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UPA2451TL-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2451

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA2451 is a switching device which can be driven

directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

4.4±0.1

5.0±0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

DS(on)4

= 20 mΩ MAX. (V = 4.5 V, I = 4.0 A)

= 21 mΩ MAX. (V = 4.0 V, I = 4.0 A)

= 25 mΩ MAX. (V = 3.1 V, I = 4.0 A)

= 32 mΩ MAX. (V = 2.5 V, I = 4.0 A)

(0.9)

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA2451TL

6PIN HWSON (4521)

(0.15)

(3.05)

(0.50)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

DSS

Drain to Source Voltage (V = 0 V)

±12

±8.2

±80

2.5

GSS

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC) (T = 25°C)

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note1

Total Power Dissipation (2unit) ^Note2

Total Power Dissipation (2unit) ^Note3

Channel Temperature

D(pulse)

°C

Drain1

Drain2

0.7

150

Body

Diode

Body

Diode

stg

Storage Temperature

–55 to +150 °C

Gate1

Gate2

Gate

Protection

Diode

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. T^A= 25°C Mounted on ceramic board

3. T^A= 25°C Mounted on FR4 board

Gate

Protection

Diode

Source1

Source2

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2002 NS CP(K)

Printed in Japan

G15621EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA2451TL-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2452	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	RENESAS	获取价格	7800mA, 24V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HWSON-6
UPA2452TL(1)-E1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC
UPA2452TL-E1	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC
UPA2452TL-E1-A	RENESAS	获取价格	N-Channel Mos Field Effect Transistor For Switching, HWSON, /Embossed Tape
UPA2452TL-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC
UPA2452TL-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC
UPA2454TL-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,15A I(D),LLCC
UPA2460T1Q-E1-A	RENESAS	获取价格	6500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, HUSON-8

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