UPA2451C

更新时间： 2024-09-15 03:57:07

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	176K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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UPA2451C 数据手册

DATA SHEET

^{MOS FIELD E}μ^FFEP^CTA^TR2^A4^NS5^IS1^TOC^R

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2451C is a switching device, which can be driven directly

by a 2.5 V power source.

The μ PA2451C features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

4.4±0.1

5.0±0.1

• Low on-state resistance

R^DS(on)1= 20.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

R^DS(on)2= 21.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)

R^DS(on)3= 25.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)

R^DS(on)4= 32.0 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)

• Built-in G-S protection diode against ESD

(0.15)

(0.9)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) ^Note1

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

30.0

12.0

(0.5)

(2.2)

Each lead has same dimensions.

8.2

Drain Current (pulse) ^Note2

60.0

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

Total Power Dissipation (2 units) ^Note1

Total Power Dissipation (2 units) ^Note3

Channel Temperature

2.5

°C

P^T2

0.7

T^ch

150

EQUIVALENT CIRCUIT

Storage Temperature

T^stg

−55 to +150

Drain1

Drain2

Notes 1. Mounted on ceramic board of 50 cm²x 1.1 mmt

2. PW ≤ 10 μs, Duty Cycle ≤ 1%

Body

Diode

Body

Diode

3. Mounted on FR-4 board of 50 cm²x 1.1 mmt

Gate1

Gate2

Gate

Protection

Diode

Protection

Diode

ORDERING INFORMATION

Source1

Source2

LEAD PLATING

PACKING

PART NUMBER

PACKAGE

μ PA2451CTL-E1-A ^Note

μ PA2451CTL-E2-A ^Note

Reel

Sn-Bi

6PIN HWSON (4521)

3000 p/reel

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18793EJ1V0DS00 (1st edition)

Date Published July 2007 NS

Printed in Japan

2007

12 3 4 5 6 7 8

中文翻译

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与UPA2451C相关器件

型号	品牌	获取价格	描述	数据表
UPA2451CTL-E1-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451CTL-E2-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451TL-A	NEC	获取价格	暂无描述
UPA2452	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	RENESAS	获取价格	7800mA, 24V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HWSON-6
UPA2452TL(1)-E1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC
UPA2452TL-E1	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,24V V(BR)DSS,7.8A I(D),LLCC
UPA2452TL-E1-A	RENESAS	获取价格	N-Channel Mos Field Effect Transistor For Switching, HWSON, /Embossed Tape

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