Datasheet > 晶体管 > 小信号场效应晶体管> UPA2450TL-A

UPA2450TL-A

更新时间： 2024-11-05 13:00:39

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	75K
描述
Small Signal Field-Effect Transistor, 8.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 4521, HWSON-6

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中文翻译

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技术参数
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UPA2450TL-A 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.3
外壳连接：	DRAIN	配置：	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	8.6 A
最大漏源导通电阻：	0.0275 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F6	元件数量：	2
端子数量：	6	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA2450TL-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2450

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA2450 is a switching device which can be driven

directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

4.4±0.1

5.0±0.1

FEATURES

• 2.5 V drive avaliable

• Low on-state resistance

R^DS(on)1= 17.5 mΩ MAX. (V^GS= 4.5 V, I^D= 4.0 A)

R^DS(on)2= 18.5 mΩ MAX. (V^GS= 4.0 V, I^D= 4.0 A)

R^DS(on)3= 22.0 mΩ MAX. (V^GS= 3.1 V, I^D= 4.0 A)

R^DS(on)4= 27.5 mΩ MAX. (V^GS= 2.5 V, I^D= 4.0 A)

• Built-in G-S protection diode against ESD

(0.9)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA2450TL

6PIN HWSON (4521)

(0.15)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

(3.05)

(0.50)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

V^DSS

V^GSS

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

±12

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation (2 unit) ^Note2

Total Power Dissipation (2 unit) ^Note3

Channel Temperature

I^D(DC)

I^D(pulse)

P^T1

±8.6

±80

2.5

EQUIVALENT CIRCUIT

°C

Drain1

Drain2

P^T2

0.7

T^ch

150

Body

Diode

Gate1

Gate2

Gate

Storage Temperature

T^stg

–55 to +150 °C

Gate

Protection

Diode

Protection

Diode

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

Source1

Source2

2. T^A= 25°C Mounted on ceramic board.

3. T^A= 25°C Mounted on FR4 board.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2002 NS CP(K)

Printed in Japan

G15612EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA2450TL-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2451	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451B	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451BTL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451C	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451CTL-E1-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451CTL-E2-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2451TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451TL-A	NEC	获取价格	暂无描述
UPA2452	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2452TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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