Datasheet > UPA2450BTL-A

UPA2450BTL-A

更新时间： 2024-11-09 21:17:31

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	140K
描述
TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA2450BTL-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	8.6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2.5 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

UPA2450BTL-A 数据手册

DATA SHEET

^{MOS FIELD E}µ^FFEP^CTA^TR2^A4^NS5^IS0^TOB^R

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA2450B is a switching device, which can be driven

directly by a 2.5 V power source.

The µ PA2450B features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

4.4±0.1

5.0±0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

R^DS(on)2= 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)

RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)

R^DS(on)4= 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)

• Built-in G-S protection diode against ESD

(0.15)

(0.9)

ORDERING INFORMATION

PART NUMBER

PACKAGE

(0.5)

(2.2)

Each lead has same dimensions.

µ PA2450BTL

6PIN HWSON (4521)

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) ^Note1

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

P^T2

T^ch

Tstg

20.0

12.0

8.6

80.0

2.5

EQUIVALENT CIRCUIT

Drain1

Drain2

Drain Current (pulse) ^Note2

Body

Diode

Total Power Dissipation (2 units) ^Note1

Total Power Dissipation (2 units) ^Note3

Channel Temperature

°C

Diode

Gate1

Gate2

Gate

0.7

150

−55 to +150

Gate

Protection

Diode

Protection

Diode

Source1

Source2

Storage Temperature

Notes 1. Mounted on ceramic board of 50 cm²x 1.1 mm

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

3. Mounted on FR-4 board of 50 cm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16635EJ1V0DS00 (1st edition)

Date Published January 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7 8

中文翻译

下载PDF

与UPA2450BTL-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2450BTL-E1-A	RENESAS	获取价格	暂无描述
UPA2450BTL-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450C	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2450CTL-E1-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2450CTL-E2-A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2450TL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2450TL-A	NEC	获取价格	Small Signal Field-Effect Transistor, 8.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
UPA2451	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2451B	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

与UPA2450BTL-A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA2450BTL-A

UPA2450BTL-A 技术参数

UPA2450BTL-A 数据手册

与UPA2450BTL-A相关器件

与UPA2450BTL-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA2450BTL-A

UPA2450BTL-A 技术参数

UPA2450BTL-A 数据手册

与UPA2450BTL-A相关器件

与UPA2450BTL-A相关文章

您还可以找

您在本页遇到什么问题？