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UPA2450BTL PDF预览

UPA2450BTL

更新时间： 2024-11-19 22:41:43
品牌 Logo 应用领域
日电电子 - NEC 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
8页 140K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA2450BTL 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.3外壳连接：DRAIN
配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：8.6 A最大漏源导通电阻：0.0275 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
JESD-609代码：e0元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA2450BTL 数据手册

 浏览型号UPA2450BTL的Datasheet PDF文件第2页浏览型号UPA2450BTL的Datasheet PDF文件第3页浏览型号UPA2450BTL的Datasheet PDF文件第4页浏览型号UPA2450BTL的Datasheet PDF文件第5页浏览型号UPA2450BTL的Datasheet PDF文件第6页浏览型号UPA2450BTL的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EµFFEPCTATR2A4NS5IS0TOBR  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The µ PA2450B is a switching device, which can be driven  
directly by a 2.5 V power source.  
1
2
3
6
5
4
The µ PA2450B features a low on-state resistance and  
excellent switching characteristics, and is suitable for  
applications such as power switch of portable machine and  
so on.  
4.4±0.1  
5.0±0.1  
FEATURES  
• 2.5 V drive available  
• Low on-state resistance  
RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)  
RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)  
RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)  
RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)  
• Built-in G-S protection diode against ESD  
7
(0.15)  
(0.9)  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
(0.5)  
(2.2)  
Each lead has same dimensions.  
µ PA2450BTL  
6PIN HWSON (4521)  
1,2: Source 1  
3: Gate 1  
7: Drain  
5,6: Source 2  
4: Gate 2  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
PT2  
Tch  
Tstg  
20.0  
12.0  
8.6  
80.0  
2.5  
V
V
A
EQUIVALENT CIRCUIT  
Drain1  
Drain2  
Drain Current (pulse) Note2  
A
Body  
Body  
Diode  
Total Power Dissipation (2 units) Note1  
Total Power Dissipation (2 units) Note3  
Channel Temperature  
W
W
°C  
°C  
Diode  
Gate1  
Gate2  
Gate  
0.7  
150  
−55 to +150  
Gate  
Protection  
Diode  
Protection  
Diode  
Source1  
Source2  
Storage Temperature  
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mm  
2. PW ≤ 10 µs, Duty Cycle ≤ 1%  
3. Mounted on FR-4 board of 50 cm2 x 1.1 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G16635EJ1V0DS00 (1st edition)  
Date Published January 2004 NS CP(K)  
Printed in Japan  
2004  
12345678

中文翻译

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与UPA2450BTL相关器件

型号 品牌 获取价格 描述 数据表
UPA2450BTL(1)-E2-A RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL(2)-E2-A RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL(3)-E1-A RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-A RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E1-A RENESAS

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 		暂无描述
UPA2450BTL-E2 RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E2-A RENESAS

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 		TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450C NEC

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 		MOS FIELD EFFECT TRANSISTOR
UPA2450CTL-E1-A NEC

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 		MOS FIELD EFFECT TRANSISTOR
UPA2450CTL-E2-A NEC

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 		MOS FIELD EFFECT TRANSISTOR

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