UPA2450

更新时间： 2024-11-20 03:57:07

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	75K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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数据手册

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UPA2450 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2450

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA2450 is a switching device which can be driven

directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

4.4±0.1

5.0±0.1

FEATURES

• 2.5 V drive avaliable

• Low on-state resistance

R^DS(on)1= 17.5 mΩ MAX. (V^GS= 4.5 V, I^D= 4.0 A)

R^DS(on)2= 18.5 mΩ MAX. (V^GS= 4.0 V, I^D= 4.0 A)

R^DS(on)3= 22.0 mΩ MAX. (V^GS= 3.1 V, I^D= 4.0 A)

R^DS(on)4= 27.5 mΩ MAX. (V^GS= 2.5 V, I^D= 4.0 A)

• Built-in G-S protection diode against ESD

(0.9)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA2450TL

6PIN HWSON (4521)

(0.15)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

(3.05)

(0.50)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

V^DSS

V^GSS

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

±12

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation (2 unit) ^Note2

Total Power Dissipation (2 unit) ^Note3

Channel Temperature

I^D(DC)

I^D(pulse)

P^T1

±8.6

±80

2.5

EQUIVALENT CIRCUIT

°C

Drain1

Drain2

P^T2

0.7

T^ch

150

Body

Diode

Gate1

Gate2

Gate

Storage Temperature

T^stg

–55 to +150 °C

Gate

Protection

Diode

Protection

Diode

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

Source1

Source2

2. T^A= 25°C Mounted on ceramic board.

3. T^A= 25°C Mounted on FR4 board.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2002 NS CP(K)

Printed in Japan

G15612EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA2450相关器件

型号	品牌	获取价格	描述	数据表
UPA2450B	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2450BTL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2450BTL	RENESAS	获取价格	Small Signal Field-Effect Transistor, 8.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
UPA2450BTL(1)-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL(2)-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL(3)-E1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E1-A	RENESAS	获取价格	暂无描述
UPA2450BTL-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC

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