UPA2450B

更新时间： 2024-11-23 22:41:43

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	140K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

获取价格

数据手册

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UPA2450B 数据手册

DATA SHEET

^{MOS FIELD E}µ^FFEP^CTA^TR2^A4^NS5^IS0^TOB^R

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA2450B is a switching device, which can be driven

directly by a 2.5 V power source.

The µ PA2450B features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

4.4±0.1

5.0±0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

R^DS(on)2= 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)

RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)

R^DS(on)4= 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)

• Built-in G-S protection diode against ESD

(0.15)

(0.9)

ORDERING INFORMATION

PART NUMBER

PACKAGE

(0.5)

(2.2)

Each lead has same dimensions.

µ PA2450BTL

6PIN HWSON (4521)

1,2: Source 1

3: Gate 1

7: Drain

5,6: Source 2

4: Gate 2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) ^Note1

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

P^T2

T^ch

Tstg

20.0

12.0

8.6

80.0

2.5

EQUIVALENT CIRCUIT

Drain1

Drain2

Drain Current (pulse) ^Note2

Body

Diode

Total Power Dissipation (2 units) ^Note1

Total Power Dissipation (2 units) ^Note3

Channel Temperature

°C

Diode

Gate1

Gate2

Gate

0.7

150

−55 to +150

Gate

Protection

Diode

Protection

Diode

Source1

Source2

Storage Temperature

Notes 1. Mounted on ceramic board of 50 cm²x 1.1 mm

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

3. Mounted on FR-4 board of 50 cm²x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16635EJ1V0DS00 (1st edition)

Date Published January 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7 8

中文翻译

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与UPA2450B相关器件

型号	品牌	获取价格	描述	数据表
UPA2450BTL	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2450BTL	RENESAS	获取价格	Small Signal Field-Effect Transistor, 8.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
UPA2450BTL(1)-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL(2)-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL(3)-E1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E1-A	RENESAS	获取价格	暂无描述
UPA2450BTL-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450BTL-E2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,COMMON DRAIN,N-CHANNEL,20V V(BR)DSS,8.6A I(D),LLCC
UPA2450C	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR

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