是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | EFLIP(LGA) |
包装说明: | GRID ARRAY, S-PBGA-B4 | 针数: | 4 |
Reach Compliance Code: | unknown | Factory Lead Time: | 1 week |
风险等级: | 5.82 | 配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PBGA-B4 |
元件数量: | 2 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.3 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | BALL |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2350T1G-E4-A | NEC |
获取价格 |
Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE | |
UPA2350T1P | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2351T1G-E4-A | NEC |
获取价格 |
Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE | |
UPA2352BT1G-E4-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu | |
UPA2352BT1P-E4-A | RENESAS |
获取价格 |
UPA2352BT1P-E4-A | |
UPA2352T1G-E4-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu | |
UPA2352T1P-E4-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu | |
UPA2353 | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2353T1G-E4-A | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2353T1P-E4-A | RENESAS |
获取价格 |
POWER, FET |