Datasheet > UPA2350T1G-E4-A

UPA2350T1G-E4-A

更新时间： 2024-09-15 20:41:19

品牌	Logo	应用领域
日电电子 - NEC		ISM频段开关晶体管
页数	文件大小	规格书
9页	209K
描述
Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, EFLIP, 4 PIN

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技术参数
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UPA2350T1G-E4-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, EFLIP, 4 PIN	Reach Compliance Code：	compliant
风险等级：	5.72	配置：	COMPLEX
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	S-XBGA-B4
JESD-609代码：	e6	元件数量：	2
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	GRID ARRAY	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	BALL	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	10	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA2350T1G-E4-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2350

DUAL Nch MOSFET

FOR SWITCHING

DESCRIPTION

OUTLINE DRAWING (Unit: mm)

The μPA2350 is a Dual N-channel MOSFET designed for Li-ion

battery protection circuit.

TOP VIEW

1.62 0.02

BOTTOM VIEW

0.65

Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

(EFLIP).

FEATURES

•

Monolithic Dual MOSFET

0.65

The Drain connection on circuit board is unnecessary, because

Drains of 2MOSFET are internally connected.

2.5 V drive available and low on-state resistance

R^SS(on)1= 35 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)

R^SS(on)2= 37 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)

R^SS(on)3= 44 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)

R^SS(on)4= 55 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)

Built-in G-S protection diode against ESD

Pb-free Bump

•

4 - φ 0.37

1-pin index mark S1

Dot area (For in-house)

// 0.1 S

S1 : Source1

G1 : Gate1

G2 : Gate2

S2 : Source2

0.2 0.02

0.28 0.03

•

0.08 S

ORDERING INFORMATION

PART NUMBER

PACKAGE

4pinEFLIP

μPA2350T1G-E4-A

EQUIVALENT CIRCUIT

Remark "-A" indicates Pb-free (This product does not contain Pb in

external electrode and other parts)."-E4" indicates the unit

orientation (E4 only).

FET2

FET1

Gate2

Gate1

Gate

Protection

Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Source to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^SS= 0 V)

Source Current (DC) ^Note1

Source Current (pulse) ^Note2

Total Power Dissipation ^Note1

Channel Temperature

VSSS

VGSS

I^S(DC)

I^S(pulse)

P^T

±12

6.0

Source2

Source1

±60

Body Diode

1.3

°C

T^ch

150

Storage Temperature

T^stg

−55 to +150

Notes 1. Mounted on ceramic board of 50 cm²× 1.0mm

2. PW ≤ 100 μs, Single pulse

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

Date Published March 2006 NS CP(K)

Printed in Japan

G17995EJ1V0DS00 (1st edition)

2006

12 3 4 5 6 7...9

中文翻译

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与UPA2350T1G-E4-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2350T1P	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2351T1G-E4-A	NEC	获取价格	Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2352BT1G-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2352BT1P-E4-A	RENESAS	获取价格	UPA2352BT1P-E4-A
UPA2352T1G-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2352T1P-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2353	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2353T1G-E4-A	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2353T1P-E4-A	RENESAS	获取价格	POWER, FET
UPA2354	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR

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