Datasheet > UPA2352T1G-E4-A

UPA2352T1G-E4-A

更新时间： 2024-11-24 15:56:03

品牌	Logo	应用领域
日电电子 - NEC		ISM频段晶体管
页数	文件大小	规格书
9页	319K
描述
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, EFLIP PACKAGE, 4 PIN

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UPA2352T1G-E4-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, EFLIP PACKAGE, 4 PIN	Reach Compliance Code：	compliant
风险等级：	5.7	Is Samacsys：	N
配置：	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PBGA-X4	JESD-609代码：	e6
元件数量：	2	端子数量：	4
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	GRID ARRAY
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	UNSPECIFIED
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	10
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA2352T1G-E4-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2352

Dual N-CHANNEL MOSFET

DESCRIPTION

OUTLINE DRAWING (Unit: mm)

The μPA2352 is a Dual N-channel MOSFET designed for Lithium-

Ion battery protection circuit.

TOP VIEW

1.40 0.02

BOTTOM VIEW

0.65

Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

(EFLIP).

FEATURES

•

Monolithic Dual MOSFET

0.65

Connecting the Drains on the circuit board is not required

because the Drains of the FET1 and the FET2 are internally

connected.

•

2.5 V drive available and low on-state resistance

R^SS(on)1= 43.0 mΩ MAX. (VGS = 4.5 V, IS = 2.0 A)

R^SS(on)2= 45.0 mΩ MAX. (VGS = 4.0 V, IS = 2.0 A)

RSS(on)3 = 55.0 mΩ MAX. (VGS = 3.1 V, IS = 2.0 A)

R^SS(on)4= 67.0 mΩ MAX. (VGS = 2.5 V, IS = 2.0 A)

Built-in G-S protection diode against ESD

Pb-free bump

Dot area (For in-house)

// 0.1

1-pin index mark S1

4 - φ 0.37

S1 : Source1

G1 : Gate1

G2 : Gate2

S2 : Source2

0.2 0.02

0.28 0.03

•

0.08 S

ORDERING INFORMATION

PART NUMBER

PACKAGE

μPA2352T1G-E4-A ^Note

4 PIN EFLIP

EQUIVALENT CIRCUIT

Note "-A" indicates Pb-free (This product does not contain Pb in

external electrode and other parts)."-E4" indicates the unit

orientation (-E4 only).

FET2

FET1

Gate2

Gate1

Gate

Protection

Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Source to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^SS= 0 V)

Source Current (DC) ^Note1

Source Current (pulse) ^Note2

Total Power Dissipation (2units) ^Note1

Channel Temperature

VSSS

VGSS

I^S(DC)

I^S(pulse)

P^T

±12

±4.0

Source2

Source1

±40

Body Diode

0.75

°C

T^ch

150

Storage Temperature

T^stg

−55 to +150

Notes 1. Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mm

2. PW ≤ 100 μs, Duty Cycle ≤ 1%

<R>

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

Date Published October 2006 NS CP(K)

Printed in Japan

G17881EJ2V0DS00 (2nd edition)

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...9

中文翻译

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与UPA2352T1G-E4-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2352T1P-E4-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2353	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2353T1G-E4-A	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2353T1P-E4-A	RENESAS	获取价格	POWER, FET
UPA2354	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2354T1G-E4-A	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2373T1P	RENESAS	获取价格	Dual Drain common, N-channel MOSFET 24V, 6A, 23.0m
UPA2373T1P-E4-A	RENESAS	获取价格	Dual Drain common, N-channel MOSFET 24V, 6A, 23.0m
UPA2450	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2450B	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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