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UPA2354T1G-E4-A PDF预览

UPA2354T1G-E4-A

更新时间: 2024-11-20 08:23:55
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管开关
页数 文件大小 规格书
9页 368K
描述
MOS FIELD EFFECT TRANSISTOR

UPA2354T1G-E4-A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE PACKAGE-4针数:4
Reach Compliance Code:compliant风险等级:5.82
Is Samacsys:N配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PBGA-B4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:GRID ARRAY
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:BALL
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UPA2354T1G-E4-A 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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