5秒后页面跳转
捷配首页

Datasheet > UPA2350BT1G-E4-A
UPA2350BT1G-E4-A PDF预览

UPA2350BT1G-E4-A

更新时间： 2024-11-24 21:15:03
品牌 Logo 应用领域
日电电子 - NEC ISM频段开关晶体管
页数 文件大小 规格书
7页 266K
描述
Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, EFLIP, 4 PIN

阅读下载

中文翻译

获取价格

UPA2350BT1G-E4-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：FLIP-CHIP包装说明：GRID ARRAY, S-XBGA-B4
针数：4Reach Compliance Code：compliant
风险等级：5.33配置：COMPLEX
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-XBGA-B4
JESD-609代码：e6元件数量：2
端子数量：4工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：GRID ARRAY峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：BALL端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA2350BT1G-E4-A 数据手册

 浏览型号UPA2350BT1G-E4-A的Datasheet PDF文件第2页浏览型号UPA2350BT1G-E4-A的Datasheet PDF文件第3页浏览型号UPA2350BT1G-E4-A的Datasheet PDF文件第4页浏览型号UPA2350BT1G-E4-A的Datasheet PDF文件第5页浏览型号UPA2350BT1G-E4-A的Datasheet PDF文件第6页浏览型号UPA2350BT1G-E4-A的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
μPA2350B  
DUAL N-CHANNEL MOSFET  
FOR SWITCHING  
OUTLINE DRAWING (Unit: mm)  
DESCRIPTION  
The μ PA2350B is a Dual N-channel MOSFET designed for  
Lithium-Ion battery protection circuit.  
TOP VIEW  
1.47 0.02  
BOTTOM VIEW  
0.65  
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection  
(EFLIP).  
G2  
G1  
S2  
S1  
FEATURES  
•
Monolithic Dual MOSFET  
0.65  
Connecting the Drains on the circuit board is not required  
because the Drains of the FET1 and the FET2 are internally  
connected.  
•
2.5 V drive available and low on-state resistance  
RSS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)  
RSS(on)2 = 37 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)  
RSS(on)3 = 44 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)  
RSS(on)4 = 55 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)  
Built-in G-S protection diode against ESD  
Pb-free Bump  
Dot area (For in-house)  
// 0.1  
1-pin index mark S1  
φ
4 - 0.37  
S
S1: Source 1  
G1: Gate 1  
G2: Gate 2  
S2: Source 2  
0.2 0.02  
S
0.28 0.03  
•
•
0.08 S  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
4-pin EFLIP  
Note  
μ PA2350BT1G-E4-A  
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)  
EQUIVALENT CIRCUIT  
Remark "-E4" indicates the unit orientation (E4 only).  
FET2  
FET1  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Source to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VSS = 0 V)  
Source Current (DC) Note1  
Source Current (pulse) Note2  
Total Power Dissipation Note1  
Channel Temperature  
VSSS  
VGSS  
IS(DC)  
IS(pulse)  
PT  
20  
V
V
Gate 1  
Gate 2  
12  
6.0  
Gate  
Protection  
Diode  
A
50  
A
1.3  
W
°C  
°C  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
Source 1  
Source 2  
Notes 1. Mounted on ceramic board of 50 cm2 x 1.0 mmt  
2. PW ≤ 100 μs, Single Pulse  
Body Diode  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this  
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage  
may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G19313EJ1V0DS00 (1st edition)  
Date Published June 2008 NS  
Printed in Japan  
2008  
1234567

中文翻译

下载PDF

与UPA2350BT1G-E4-A相关器件

型号 品牌 获取价格 描述 数据表
UPA2350BT1P-E4-A RENESAS

获取价格

 		UPA2350BT1P-E4-A
UPA2350T1G-E4-A NEC

获取价格

 		Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2350T1P RENESAS

获取价格

 		MOS FIELD EFFECT TRANSISTOR
UPA2351T1G-E4-A NEC

获取价格

 		Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2352BT1G-E4-A NEC

获取价格

 		Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2352BT1P-E4-A RENESAS

获取价格

 		UPA2352BT1P-E4-A
UPA2352T1G-E4-A NEC

获取价格

 		Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2352T1P-E4-A NEC

获取价格

 		Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semicondu
UPA2353 RENESAS

获取价格

 		MOS FIELD EFFECT TRANSISTOR
UPA2353T1G-E4-A RENESAS

获取价格

 		MOS FIELD EFFECT TRANSISTOR

与UPA2350BT1G-E4-A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证