Datasheet > STW56NM60N

STW56NM60N

更新时间： 2024-11-28 12:27:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	415K
描述
N-channel 600 V, 0.05 Î©, 45 A TO-247 MDmeshâ¢ II Power MOSFET

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STW56NM60N 数据手册

STW56NM60N

N-channel 600 V, 0.05 Ω, 45 A TO-247

MDmesh™ II Power MOSFET

Preliminary data

Features

R_DS(on)

max

Order code

V_DSS

I_D

STW56NM60N

600 V

< 0.06 Ω

45 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

TO-247

Applications

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

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Table 1.

Device summary

Order code

STW56NM60N

Marking

Package

TO-247

Packaging

56NM60N

Tube

July 2011

Doc ID 15723 Rev 2

1/11

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

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STW56NM60N 替代型号

型号	品牌	替代类型	描述	数据表
STW55NM60N	STMICROELECTRONICS	类似代替	51A, 600V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
STW60N65M5	STMICROELECTRONICS	类似代替	N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET
STFW60N65M5	STMICROELECTRONICS	功能相似	N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET

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