5秒后页面跳转
STU65G0 PDF预览

STU65G0

更新时间: 2024-11-01 22:19:43
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
4页 32K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

STU65G0 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
击穿电压标称值:400 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
极性:UNIDIRECTIONAL最大重复峰值反向电压:342 V
子类别:Transient Suppressors表面贴装:YES
Base Number Matches:1

STU65G0 数据手册

 浏览型号STU65G0的Datasheet PDF文件第2页浏览型号STU65G0的Datasheet PDF文件第3页浏览型号STU65G0的Datasheet PDF文件第4页 
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSOR  
STU606I - STU65G4  
BR  
V : 6.8 - 440 Volts  
SMB (DO-214AA)  
PPK : 600 Watts  
±
1.1 0.3  
FEATURES :  
* 600W surge capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
±
0.22 0.07  
±
2.0 0.1  
±
2.3 0.2  
±
* Fast response time : typically less  
then 1.0 ps from 0 volt to VBR(min.)  
3.6 0.15  
m
* Typical IR less then 1 A above 10V  
Dimensions in millimeter  
MECHANICAL DATA  
* Case : SMB Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Lead Formed for Surface Mount  
* Polarity : Color band denotes cathode end except Bipolar.  
* Mounting position : Any  
* Weight : 0.093 grams  
DEVICES FOR BIPOLAR APPLICATIONS  
For bi-directional altered the third letter of type from "U" to be "B".  
Electrical characteristics apply in both directions  
MAXIMUM RATINGS  
°
Rating at 25 C ambient temperature unless otherwise specified.  
Rating  
Symbol  
PPK  
Value  
Minimum 600  
5.0  
Unit  
Watts  
Watts  
°
Peak Power Dissipation at Ta = 25 C, Tp=1ms (Note1)  
°
Steady State Power Dissipation at T = 75 C  
PD  
L
Peak Forward Surge Current, 8.3ms Single Half  
Sine-Wave Superimposed on Rated Load  
(JEDEC Method) (Note 3)  
IFSM  
100  
Amps.  
°
C
Operating and Storage Temperature Range  
TJ, TSTG  
- 55 to + 150  
Note :  
°
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25 C per Fig. 1  
(2) Mounted on copper Lead area at 5.0 mm2 ( 0.013 mm thick ).  
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per Minutes maximum.  
UPDATE : JULY 13, 1998  

与STU65G0相关器件

型号 品牌 获取价格 描述 数据表
STU65G4 EIC

获取价格

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
STU6N60 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-220VAR
STU6N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET,
STU6N62K3 STMICROELECTRONICS

获取价格

N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMES
STU6N65K3 STMICROELECTRONICS

获取价格

N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
STU6N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET,IPA
STU6N90K5 STMICROELECTRONICS

获取价格

N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET,IP
STU6N95K5 STMICROELECTRONICS

获取价格

N-channel 950 V, 1 Ω typ., 9 A Zener-protect
STU6NA100 STMICROELECTRONICS

获取价格

N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
STU6NA60 STMICROELECTRONICS

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,6.8A I(D),TO-220VAR