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STF20N65M5 PDF预览

STF20N65M5

更新时间: 2024-11-24 14:58:11
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 1052K
描述
N沟道650 V、0.160 Ohm典型值、18 A MDmesh M5功率MOSFET,TO-220FP封装

STF20N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.7配置:Single
最大漏极电流 (Abs) (ID):18 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
子类别:FET General Purpose Powers表面贴装:NO
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STF20N65M5 数据手册

 浏览型号STF20N65M5的Datasheet PDF文件第2页浏览型号STF20N65M5的Datasheet PDF文件第3页浏览型号STF20N65M5的Datasheet PDF文件第4页浏览型号STF20N65M5的Datasheet PDF文件第5页浏览型号STF20N65M5的Datasheet PDF文件第6页浏览型号STF20N65M5的Datasheet PDF文件第7页 
STF20N65M5, STFI20N65M5,  
STFW20N65M5  
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5  
Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages  
Datasheet - production data  
Features  
Order code  
STF20N65M5  
STFI20N65M5  
STFW20N65M5  
VDS @ TJmax  
RDS(on) max  
ID  
710 V  
0.190 Ω  
18 A  
I2PAKFP (TO-281)  
TO-220FP  
Extremely low RDS(on)  
Low gate charge and input capacitance  
Excellent switching performance  
100% avalanche tested  
3
2
1
TO-3PF  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
D(2)  
Description  
These devices are N-channel Power MOSFET  
based on the MDmesh™ M5 innovative vertical  
process technology combined with the well-  
known PowerMESH™ horizontal layout. The  
resulting products offer extremely low on-  
resistance, making them particularly suitable for  
applications requiring high power and superior  
efficiency.  
G(1)  
S(3)  
AM01475v1_noZen_noTab  
Table 1: Device summary  
Marking Package  
Order code  
STF20N65M5  
STFI20N65M5  
STFW20N65M5  
Packaging  
TO-220FP  
I²PAKFP (TO-281)  
TO-3FP  
20N65M5  
Tube  
March 2017  
DocID024223 Rev 3  
1/18  
www.st.com  
This is information on a product in full production.  

STF20N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STI20N65M5 STMICROELECTRONICS

功能相似

N-channel 650 V, 0.160 Ω typ., 18 A MDmeshâ„

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