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STD616AT4 PDF预览

STD616AT4

更新时间: 2024-02-28 10:37:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
6页 53K
描述
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 1.6A I(C) | TO-252AA

STD616AT4 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N最大集电极电流 (IC):1.6 A
集电极-发射极最大电压:450 V配置:SINGLE
最小直流电流增益 (hFE):4JEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD616AT4 数据手册

 浏览型号STD616AT4的Datasheet PDF文件第2页浏览型号STD616AT4的Datasheet PDF文件第3页浏览型号STD616AT4的Datasheet PDF文件第4页浏览型号STD616AT4的Datasheet PDF文件第5页浏览型号STD616AT4的Datasheet PDF文件第6页 
STD616A  
HIGH VOLTAGE NPN POWER TRANSISTOR  
REVERSE PINS OUT Vs STANDARD IPAK  
(TO-251) / DPAK (TO-252) PACKAGES  
HIGH VOLTAGE CAPABILITY  
HIGH DC CURRENT GAIN  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGEIN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
1
1
2
3
3
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
APPLICATIONS:  
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
The STD616A is manufactured using High  
Voltage Multi Epitaxial Planar technology for high  
switching speeds and high voltage withstand  
capability.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
1000  
450  
Unit  
V
V
12  
V
1.6  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
2.4  
A
IB  
0.8  
A
IBM  
Base Peak Current (tp < 5 ms)  
1.2  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
20  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
September 2001  

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