Datasheet > SST12CP33-QUCE-K

SST12CP33-QUCE-K

更新时间： 2024-11-09 01:10:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		局域网 WLAN 无线局域网
页数	文件大小	规格书
17页	250K
描述
2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM

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SST12CP33-QUCE-K 数据手册

SST12CP33

2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM

Features

1.0

PRODUCT DESCRIPTION

• High Gain:

SST12CP33 is

a high-power, high-gain, WLAN

802.11b/g/n/256 QAM power amplifier (PA) based on

the highly-reliable InGaP/GaAs HBT technology.

- Typically 38 dB gain across 2.4–2.5 GHz over

temperature -40°C to +85°C

• Linear operation at both 3.3V and 5V

• High linear output power at 5V:

This PA can be easily configured for high-power appli-

cations with high power-added efficiency while operat-

ing over the 2.4-2.5 GHz frequency band. It can

operate at both 3.3V and 5V V_CC, and typically pro-

vides 38 dB gain with 25% power-added efficiency @

P_OUT= 28 dBm for 802.11g at 5V.

- >30 dBm P1dB

- Meets 802.11b ACPR requirements up to 28

dBm with 30% power-added efficiency

- Meets 802.11g OFDM spectrum mask require-

ment up to 28 dBm

- Typically 25 dBm with <3% EVM, 802.11g,

54 Mbps, 350 mA current

- Typically 24 dBm with <2.5% EVM, 802.11n,

MCS7-HT20, 50% duty cycle

- Typically 23 dBm with <1.75% EVM, MCS9-

VHT40, 50% duty cycle, 320 mA current

SST12CP33 has excellent linearity, typically 25 dBm at

3% EVM with 54 Mbps 802.11g operation at 5V while

meeting 802.11g spectrum mask at 28 dBm and 21

dBm at 3% EVM at 3.3V bias. SST12CP33 also has a

single-ended power detector which lowers the users’

cost for power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/-down control.

• High linear output power at 3.3V:

- Meets 802.11b ACPR requirements up to 25

dBm with 27% power-added efficiency

- Typically 21 dBm with <3% EVM, 802.11g, 54

Mbps, 240 mA current

SST12CP33 is offered in 16-contact UQFN package.

See Figure 3-1 for pin assignments and Table 3-1 for

pin descriptions.

- Typically 20.5 dBm with <2.5% EVM, 802.11n,

MCS7-HT20, 230 mA current

- Typically 19 dBm with <1.75% EVM, MCS9-

VHT40, 210 mA current

• High-speed power-up/down

- Turn on/off time (10%-90%) <100 ns

• 10:1 VSWR survivability (unconditionally stable

up to 28 dBm)

• On-chip power detection

- >25 dB dynamic range, from 5 dBm to 30 dBm

- VSWR- and temperature-insensitive

• Matched RF input/simple output matching

• Packages available

- 16-contact UQFN (3mm x 3mm)

• All non-Pb (lead-free) devices are RoHS compliant

Applications

• WLAN (IEEE 802.11b/g/n)

• WLAN 256 QAM

• AP router

• Cordless phones

• 2.4 GHz ISM wireless equipment

 2015 Microchip Technology Inc.

DS70005222B-page 1

12 3 4 5 6 7...17

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与SST12CP33-QUCE-K相关器件

型号	品牌	获取价格	描述	数据表
SST12LF01-QDE	MICROCHIP	获取价格	SPECIALTY TELECOM CIRCUIT, QCC24, 4 X 4 MM, ROHS COMPLIANT, MO-220JWGGD-4, WQFN-24
SST12LF01-QDE	SILICON	获取价格	Telecom Circuit, 1-Func, 4 X 4 MM, ROHS COMPLIANT, MO-220J-WGGD-4, WQFN-24
SST12LF01-QDF	SILICON	获取价格	Telecom Circuit, 1-Func, 4 X 4 MM, ROHS COMPLIANT, MO-220J-WGGD-4, WQFN-24
SST12LF01-QDF	MICROCHIP	获取价格	SPECIALTY TELECOM CIRCUIT, QCC24, 4 X 4 MM, ROHS COMPLIANT, MO-220JWGGD-4, WQFN-24
SST12LF02	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
SST12LF02_15	MICROCHIP	获取价格	2.4 GHz WLAN High-Gain, High-Efficiency FEM
SST12LF02-QXCE	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
SST12LF02-QXCE-K	MICROCHIP	获取价格	2.4 GHz WLAN High-Gain, High-Efficiency FEM
SST12LF03	ETC	获取价格	2.4 GHz 高增益及高效率前端模块
SST12LF09	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module

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