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SST12LF01-QDF PDF预览

SST12LF01-QDF

更新时间: 2024-11-08 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 电信电信集成电路
页数 文件大小 规格书
21页 342K
描述
SPECIALTY TELECOM CIRCUIT, QCC24, 4 X 4 MM, ROHS COMPLIANT, MO-220JWGGD-4, WQFN-24

SST12LF01-QDF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN,针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.19
Is Samacsys:NJESD-30 代码:S-XQCC-N24
JESD-609代码:e3长度:4 mm
湿度敏感等级:3功能数量:1
端子数量:24最高工作温度:80 °C
最低工作温度:封装主体材料:UNSPECIFIED
封装代码:HVQCCN封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:0.8 mm
标称供电电压:3.3 V表面贴装:YES
电信集成电路类型:TELECOM CIRCUIT温度等级:COMMERCIAL EXTENDED
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:4 mm
Base Number Matches:1

SST12LF01-QDF 数据手册

 浏览型号SST12LF01-QDF的Datasheet PDF文件第2页浏览型号SST12LF01-QDF的Datasheet PDF文件第3页浏览型号SST12LF01-QDF的Datasheet PDF文件第4页浏览型号SST12LF01-QDF的Datasheet PDF文件第5页浏览型号SST12LF01-QDF的Datasheet PDF文件第6页浏览型号SST12LF01-QDF的Datasheet PDF文件第7页 
2.4 GHz Front-End Module  
SST12LF01  
A Microchip Technology Company  
Data Sheet  
The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-per-  
formance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in  
compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT  
technology, the SST12LF01 operates within the frequency range of 2.4- 2.55 GHz  
at a very low DC-current consumption. The Transmitter chain has excellent linear-  
ity, typically <3% added EVM up to 19 dBm output power, which is essential for 54  
Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The  
SST12LF01 is offered in a 24-contact WQFN package.  
Features  
• Gain:  
• Built-in, Ultra-low IREF power-up/down control  
– Typically 12 dB gain across 2.4–2.5 GHz for Receiver  
– IREF <4 mA  
(RX) chain.  
• High-speed power-up/down  
– Typically 29 dB gain across 2.4–2.5 GHz over temperature  
0°C to +80°C for Transmitter (TX) chain.  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay included  
<200 ns  
• Low-Noise Figure  
– Typical 1.45 dB across 2.4–2.55 GHz  
• High temperature stability  
• 50 Input/Output matched along RX chain.  
– ~1 dB gain/power variation between 0°C to +85°C  
• Rx IIP3  
• Simple input/output matching  
• Single positive power supply  
– >1 dbm across 2.4–2.55 GHz  
• High linear output power:  
• Packages available  
– >26.5 dBm P1dB  
– Meets 802.11g OFDM ACPR requirement up to 23 dBm  
– ~3% added EVM up to 19 dBm for  
54 Mbps 802.11g signal  
– 24-contact WQFN – 4mm x 4mm  
• All devices are RoHS compliant  
– Meets 802.11b ACPR requirement up to 24 dBm  
• High power-added efficiency/Low operating cur-  
rent for both 802.11g/b applications  
Applications  
• WLAN  
– ~22%/210 mA @ POUT = 22 dBm for 802.11g  
– ~26%/240 mA @ POUT = 23.5 dBm for 802.11b  
• Low idle current  
• Bluetooth  
– ~70 mA ICQ  
• Wireless Network  
• Low shut-down current (Typical 2.5 µA)  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS75040A  
12/11  

SST12LF01-QDF 替代型号

型号 品牌 替代类型 描述 数据表
SST12LF01-QDE MICROCHIP

完全替代

SPECIALTY TELECOM CIRCUIT, QCC24, 4 X 4 MM, ROHS COMPLIANT, MO-220JWGGD-4, WQFN-24

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