Datasheet > SST12CP11C-QUCE-K

SST12CP11C-QUCE-K

更新时间： 2024-11-11 01:10:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	708K
描述
2.4 GHz High-Linearity, High-Efficiency Power Amplifier

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SST12CP11C

2.4 GHz High-Linearity, High-Efficiency Power Amplifier

Features

1.0

PRODUCT DESCRIPTION

• High Gain:

SST12CP11C is a high-power and high-gain power

amplifier (PA) based on the highly-reliable InGaP/GaAs

HBT technology.

- Typically 37 dB gain across 2.4–2.5 GHz over

temperature -20°C to +85°C

• High linear output power:

- >30 dBm P1dB

This PA can be easily configured for high-power appli-

cations with high power-added efficiency while operat-

ing over the 2.4-2.5 GHz frequency band. It typically

provides 37 dB gain with 25% power-added efficiency

@ P_OUT= 28 dBm for 802.11g.

- Please refer to “Absolute Maximum Stress

Ratings” on page 5

- Meets 802.11g OFDM spectrum mask require-

ment up to 28 dBm

- Typically 25 dBm with <3% EVM, 802.11g,

54 Mbps

- Typically 24 dBm with <2.5% EVM, 802.11n,

MCS7-HT20, 50% duty cycle

SST12CP11C has excellent linearity, typically 25 dBm

at 3% EVM with 54 Mbps 802.11g operation while

meeting 802.11g spectrum mask at 28 dBm.

SST12CP11C also has a single-ended power detector

which lowers the users’ cost for power control.

- Typically 24 dBm with <1.75% EVM, MCS9-

HT40, 50% duty cycle

The power amplifier IC also features easy board-level

usage along with high-speed power-up/-down control.

- Meets 802.11b ACPR requirement up to 28 dBm

SST12CP11C is offered in 16-contact UQFN package.

See Figure 3-1 for pin assignments and Table 4-1 for

pin descriptions.

• High-speed power-up/down

- Turn on/off time (10%-90%) <100 ns

• 10:1 VSWR survivability (unconditionally stable

up to 28 dBm)

• On-chip power detection

- >20 dB dynamic range

- VSWR- and temperature-insensitive

• Simple input/output matching

• Packages available

- 16-contact UQFN (3mm x 3mm)

- Pin-to-pin compatible with SST12CP11

• All non-Pb (lead-free) devices are RoHS compliant

Applications

• WLAN (IEEE 802.11b/g/n)

• WLAN 256 QAM

• AP router

• WiMax (IEEE 802.16e)

• Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

 2015 Microchip Technology Inc.

DS70005143B-page 1

12 3 4 5 6 7...16

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与SST12CP11C-QUCE-K相关器件

型号	品牌	获取价格	描述	数据表
SST12CP11-QVCE	MICROCHIP	获取价格	2.4 GHz High-Power and High-Gain Power Amplifier
SST12CP33	MICROCHIP	获取价格	2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM
SST12CP33-QUCE	MICROCHIP	获取价格	2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM
SST12CP33-QUCE-K	MICROCHIP	获取价格	2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM
SST12LF01-QDE	MICROCHIP	获取价格	SPECIALTY TELECOM CIRCUIT, QCC24, 4 X 4 MM, ROHS COMPLIANT, MO-220JWGGD-4, WQFN-24
SST12LF01-QDE	SILICON	获取价格	Telecom Circuit, 1-Func, 4 X 4 MM, ROHS COMPLIANT, MO-220J-WGGD-4, WQFN-24
SST12LF01-QDF	SILICON	获取价格	Telecom Circuit, 1-Func, 4 X 4 MM, ROHS COMPLIANT, MO-220J-WGGD-4, WQFN-24
SST12LF01-QDF	MICROCHIP	获取价格	SPECIALTY TELECOM CIRCUIT, QCC24, 4 X 4 MM, ROHS COMPLIANT, MO-220JWGGD-4, WQFN-24
SST12LF02	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones
SST12LF02_15	MICROCHIP	获取价格	2.4 GHz WLAN High-Gain, High-Efficiency FEM

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